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FFH30S60S
—
STEALTH? II Diode
?2007 Fairchild Semiconductor Corporation
FFH30S60S Rev. C1
www.fairchildsemi.com
1
October 2013
FFH30S60S
30 A, 600 V STEALTH? II Diode
Features
? Stealth Recovery, trr = 40 ns (@ IF = 30 A)
? Max. Forward Voltage, VF = 2.6 V (@ TC = 25°C)
? 600 V Reverse Voltage and High Reliability
? Avalanche Energy Rated
? RoHS Compliant
Applications
? General Purpose
?SMPS
? Boost Diode in Continuous Mode Power Factor Corrections
? Power Switching Circuits
Description
The FFH30S60S is STEALTH? II diode with soft recovery
characteristics using silicon nitride passivated ion-implanted
epitaxial planar construction. This
device is intended for use as a
freewheeling boost diode in switching power supplies and other
power switching applications. Their low stored charge and
hyperfast soft recovery minimize
ringing and electrical noise in
power switching circuits, reducing power loss in switching
transistors.
Absolute Maximum Ratings
TC = 25oC unless otherwise noted.
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Rating Unit
VRRM
Peak Repetitive Reverse Voltage 600 V
VRWM
Working Peak Reverse Voltage 600 V
VR
DC Blocking Voltage 600 V
IF(AV)
Average Rectified Forward Current @ TC
= 102
oC 30 A
IFSM
Non-Repetitive Peak Surge Current
60 Hz Single Half-Sine Wave
300 A
TJ, TSTG
Operating and Storage Temperature Range -65 to +150
oC
Symbol Parameter Rating Unit
R?JC
Maximum Thermal Resistance, Junction to Case 1.1
oC/W
Device Marking Device Package Reel Size Tape Width Quantity
F30S60S FFH30S60STU TO-247-2L - - 50
1. Cathode 2. Anode
Pin Assigments
1. Cathode 2. Anode
TO-247-2L
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